bias resistor t ransistor pnp silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping 1 3000/tape & reel leshan radio company, ltd. 1/3 ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldta113zet1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldta113zet1g ldta113zet3g 1 e8 z a b so lu te maximu m ratin g s (t a= 25 c) z electrical ch aracteristics (t a= 25 c) e8 1 2 3 sc-89 10 10 limits parameter symbol unit supply voltage input voltage output current power dissipation junction temperature storage temperature p d tj tstg 50 ? 10 to + 5 100 100 200 150 ? 55 to + 150 v v ma mw c c v cc v in i o i c(max.) ? ? ? 3 collec t or 2 emitter 1 base r1 r2
leshan radio company, ltd. 2/3 z electrical ch aracteristic cu rv es ldta113zet1g
leshan radio company, ltd. 3/3 ldta113zet1g notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89
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